Revealing and reducing growth-induced interfacial disorder in preferentially aligned nitrogen-vacancy centers in diamond
Cheng-I Ho, Marina Davydova, Patrik Straňák, Felix Hoffmann, Peter Knittel, Andrej Denisenko, Jörg Wrachtrup
Fig. 1, panel (a)
CN/C intensity ratio of the plasma optical emission, on a log axis, against growth time (min) for samples S1 and S2. The red dashed line marks the interface between the buffer layer and the N-doped layer, and the gray dashed line the diamond surface.
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- Data: data.csv
Provenance
This panel was reproduced from the authors' public data deposit (DaRUS: https://doi.org/10.18419/darus-6396, CC BY 4.0). The plot shown here is re-rendered for interactive viewing and analysis. See the paper for the original figure and full scientific context.
License: CC BY 4.0.
arXiv:2608.02350 · arXiv: 2608.02350
Other panels of Fig. 1: (b)
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