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Revealing and reducing growth-induced interfacial disorder in preferentially aligned nitrogen-vacancy centers in diamond

Cheng-I Ho, Marina Davydova, Patrik Straňák, Felix Hoffmann, Peter Knittel, Andrej Denisenko, Jörg Wrachtrup
2026arXiv:2608.02350CC BY 4.0LCP000035

Fig. 1, panel (b)

ToF-SIMS nitrogen concentration [N] (ppm) against depth from the surface (nm) for samples S1 and S2. The blue and orange dashed lines mark the interfaces of S1 and S2.

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This panel was reproduced from the authors' public data deposit (DaRUS: https://doi.org/10.18419/darus-6396, CC BY 4.0). The plot shown here is re-rendered for interactive viewing and analysis. See the paper for the original figure and full scientific context.

License: CC BY 4.0.

arXiv:2608.02350 · arXiv: 2608.02350

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