Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation
Moriyoshi Haruyama et al.
Fig. 4, panel (b)
SRIM-calculated depth distributions against range (nm): vacancies (/nm, left axis) created by C$_5$N$_4$H$_n$ ($n = 1$, solid grey) and by a nitrogen ion (dashed grey), and the implanted nitrogen atoms (/nm, right axis, solid black).
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- Data: data.csv
Provenance
This panel was reproduced from the authors' public data deposit (Nature Communications Source Data: https://doi.org/10.1038/s41467-019-10529-x, CC BY 4.0). The plot shown here is re-rendered for interactive viewing and analysis. See the paper for the original figure and full scientific context.
License: CC BY 4.0.
Nat. Commun. 10, 2664 (2019) · DOI: 10.1038/s41467-019-10529-x
Other panels of Fig. 4: (a) (c)
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